Light sensitive memristor with bi-directional and wavelength-dependent conductance control

Show simple item record

dc.contributor.author Maier, P.
dc.contributor.author Hartmann, F.
dc.contributor.author Dias, M. Rebello Sousa [UNIFESP]
dc.contributor.author Emmerling, M.
dc.contributor.author Schneider, C.
dc.contributor.author Castelano, L. K. [UNIFESP]
dc.contributor.author Kamp, M.
dc.contributor.author Marques, G. E. [UNIFESP]
dc.contributor.author Lopez-Richard, V. [UNIFESP]
dc.contributor.author Worschech, L.
dc.contributor.author Hoefling, S.
dc.date.accessioned 2020-08-14T13:44:14Z
dc.date.available 2020-08-14T13:44:14Z
dc.date.issued 2016
dc.identifier http://dx.doi.org/10.1063/1.4955464
dc.identifier.citation Applied Physics Letters. Melville, v. 109, n. 2, p. -, 2016.
dc.identifier.issn 0003-6951
dc.identifier.uri https://repositorio.unifesp.br/handle/11600/57546
dc.description.abstract We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories. Published by AIP Publishing. en
dc.description.sponsorship European Union
dc.description.sponsorship State of Bavaria
dc.description.sponsorship CNPq
dc.description.sponsorship FAPESP
dc.format.extent -
dc.language.iso eng
dc.publisher Amer Inst Physics
dc.relation.ispartof Applied Physics Letters
dc.rights Acesso restrito
dc.title Light sensitive memristor with bi-directional and wavelength-dependent conductance control en
dc.type Artigo
dc.description.affiliation Univ Wurzburg, Tech Phys, D-97074 Wurzburg, Germany
dc.description.affiliation Univ Wurzburg, Inst Phys, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
dc.description.affiliation Univ Fed Sao Paulo, Dept Fis, BR-13565905 Sao Paulo, Brazil
dc.description.affiliation Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
dc.description.affiliation Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland
dc.description.affiliationUnifesp Univ Fed Sao Paulo, Dept Fis, BR-13565905 Sao Paulo, Brazil
dc.description.sponsorshipID European Union: 318287 Landauer
dc.description.sponsorshipID FAPESP: 2014/02112-3
dc.description.sponsorshipID FAPESP: 2015/10765-0
dc.identifier.doi 10.1063/1.4955464
dc.description.source Web of Science
dc.identifier.wos WOS:000381155200055
dc.coverage Melville
dc.citation.volume 109
dc.citation.issue 2



File

File Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record

Search


Browse

Statistics

My Account