Light sensitive memristor with bi-directional and wavelength-dependent conductance control

Light sensitive memristor with bi-directional and wavelength-dependent conductance control

Author Maier, P. Google Scholar
Hartmann, F. Google Scholar
Dias, M. Rebello Sousa Autor UNIFESP Google Scholar
Emmerling, M. Google Scholar
Schneider, C. Google Scholar
Castelano, L. K. Autor UNIFESP Google Scholar
Kamp, M. Google Scholar
Marques, G. E. Autor UNIFESP Google Scholar
Lopez-Richard, V. Autor UNIFESP Google Scholar
Worschech, L. Google Scholar
Hoefling, S. Google Scholar
Abstract We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories. Published by AIP Publishing.
xmlui.dri2xhtml.METS-1.0.item-coverage Melville
Language English
Sponsor European Union
State of Bavaria
Grant number European Union: 318287 Landauer
FAPESP: 2014/02112-3
FAPESP: 2015/10765-0
Date 2016
Published in Applied Physics Letters. Melville, v. 109, n. 2, p. -, 2016.
ISSN 0003-6951 (Sherpa/Romeo, impact factor)
Publisher Amer Inst Physics
Extent -
Access rights Closed access
Type Article
Web of Science ID WOS:000381155200055

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