Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodes

Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodes

Author Santos, L. F. dos Autor UNIFESP Google Scholar
Gobato, Y. Galvao Autor UNIFESP Google Scholar
Lopez-Richard, V. Autor UNIFESP Google Scholar
Marques, G. E. Autor UNIFESP Google Scholar
Brasil, M. J. S. P. Google Scholar
Henini, M. Google Scholar
Airey, R. J. Google Scholar
Institution Universidade Federal de São Paulo (UNIFESP)
Universidade Estadual de Campinas (UNICAMP)
Univ Nottingham
Univ Sheffield
Abstract We have investigated the polarized emission from a n-type GaAs/AlGaAs resonant tunneling diode under magnetic field. the GaAs contact layer emission shows a large constant negative circular polarization. A similar result is observed for the quantum well, but only when electrons are injected from the substrate, while for inverted biases, the polarization tends to become positive for small voltages and large laser excitation intensities. We believe that the quantum well polarization may be associated to the partial thermalization of minority carriers on the well subbands and is thus critically dependent on the bias-controlled density of carriers accumulated in the well.
Language English
Date 2008-04-07
Published in Applied Physics Letters. Melville: Amer Inst Physics, v. 92, n. 14, 3 p., 2008.
ISSN 0003-6951 (Sherpa/Romeo, impact factor)
Publisher Amer Inst Physics
Extent 3
Origin http://dx.doi.org/10.1063/1.2908867
Access rights Closed access
Type Article
Web of Science ID WOS:000254940500103
URI http://repositorio.unifesp.br/handle/11600/30595

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